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File name: | buj100at_1.pdf [preview buj100at 1] |
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Mfg: | Philips |
Model: | buj100at 1 🔎 |
Original: | buj100at 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips buj100at_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 03-06-2020 |
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File name buj100at_1.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 1.0 A ICM Collector current peak value - 2.0 A Ptot Total power dissipation Tsp 25 |
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